Dr. Jeffry Kelber--director of the Center for Electronic Materials Processing and Integration, and
professor, Department of Chemistry - University of North Texas--will speak Monday, Oct. 14 at 4 p.m. in 136 Jorgensen Hall. This is a CNFM/NCMN/Physics Dept. seminar.
His topic is "Direct Graphene Growth on Oxides and Nitrides: Towards Practical Charge and Spin Devices."
The direct growth of graphene on dielectric substrates, using industrially scalable methods, including chemical vapor deposition or molecular beam epitaxy (CVD, MBE) is an essential step towards the development of practical graphene devices. The factors determining graphene epitaxy on dielectric substrates are not well understood, and lattice matching appears to be important in some cases but not in others. In cases where such direct growth has been achieved, however, the substrate critically impacts the electronic or magnetic properties of the single or few layer graphene film. This includes substantial n-type doping for CVD graphene/BN(0001)/Ru(0001), band gap (~ 0.5-1 eV) formation for CVD graphene/MgO(111), and significant p-type doping and substrate-induced spin-polarization at and above 300 K for MBE graphene/Co3O4(111)/Co(0001). The prospects for practical, manufacturable devices based on these and similar graphene/dielectric heterojunctions will be discussed, including the roles of band gaps in spin and charge FETs, and the relationships between interfacial chemistry and resulting electronic and magnetic properties.
More details at: http://go.unl.edu/b8d8